文献
J-GLOBAL ID:201702286081583403
整理番号:17A1639079
近紫外発光ダイオード効率AlGaN/InGaNベースのCr/ITO半透明n型電極【Powered by NICT】
Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes
著者 (4件):
Kim Hwankyo
(Department of Nanophotonics, Korea University, Seoul, 02841, South Korea)
,
Kim Dae-Hyun
(Department of Nanophotonics, Korea University, Seoul, 02841, South Korea)
,
Seong Tae-Yeon
(Department of Nanophotonics, Korea University, Seoul, 02841, South Korea)
,
Seong Tae-Yeon
(Department of Materials Science and Engineering, Korea University, Seoul, 02841, South Korea)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
111
ページ:
872-877
発行年:
2017年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)