文献
J-GLOBAL ID:201702286165188986
整理番号:17A0214308
超大型最終レベルキャッシュのための高速読取/書込回路を用いた新しい電圧制御されたMRAM(VCM)【Powered by NICT】
Novel voltage controlled MRAM (VCM) with fast read/write circuits for ultra large last level cache
著者 (8件):
Noguchi Hiroki
(Toshiba Corporation, Corporate R&D Center, Kawasaki, Kanagawa, Japan)
,
Ikegami Kazutaka
(Toshiba Corporation, Corporate R&D Center, Kawasaki, Kanagawa, Japan)
,
Abe Keiko
(Toshiba Corporation, Corporate R&D Center, Kawasaki, Kanagawa, Japan)
,
Fujita Shinobu
(Toshiba Corporation, Corporate R&D Center, Kawasaki, Kanagawa, Japan)
,
Shiota Yoichi
(National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki, Japan)
,
Nozaki Takayuki
(National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki, Japan)
,
Yuasa Shinji
(National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki, Japan)
,
Suzuki Yoshishige
(National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
27.5.1-27.5.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)