文献
J-GLOBAL ID:201702286535908532
整理番号:17A0751659
Al_xGa_1xN/GaNヘテロ構造におけるナノスケールの亀裂生成とOhm接触の形成に及ぼすそれらの影響【Powered by NICT】
Nanoscale fissure formation in AlxGa1-xN/GaN heterostructures and their influence on Ohmic contact formation
著者 (10件):
Smith M. D.
(Nitride Materials Group, Tyndall National Institute, University College Cork, Cork, Ireland)
,
Smith M. D.
(School of Engineering, University College Cork, Cork, Ireland)
,
Thomson D.
(Department of Physics, University of Strathclyde, Glasgow, UK)
,
Zubialevich V. Z.
(Nitride Materials Group, Tyndall National Institute, University College Cork, Cork, Ireland)
,
Li H.
(Nitride Materials Group, Tyndall National Institute, University College Cork, Cork, Ireland)
,
Li H.
(School of Engineering, University College Cork, Cork, Ireland)
,
Naresh-Kumar G.
(Department of Physics, University of Strathclyde, Glasgow, UK)
,
Trager-Cowan C.
(Department of Physics, University of Strathclyde, Glasgow, UK)
,
Parbrook P. J.
(Nitride Materials Group, Tyndall National Institute, University College Cork, Cork, Ireland)
,
Parbrook P. J.
(School of Engineering, University College Cork, Cork, Ireland)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
1
ページ:
ROMBUNNO.201600353
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)