文献
J-GLOBAL ID:201702286582942148
整理番号:17A1459156
溶液処理酸化アルミニウム誘電体層の特性と低電圧手術インジウム-ガリウム-亜鉛-オキシド薄膜トランジスタへの応用に及ぼすストロンチウムのドーピング効果【Powered by NICT】
Strontium doping effects on the characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide thin-film transistors
著者 (6件):
Kim Jaeyoung
(SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea)
,
Choi Seungbeom
(SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea)
,
Kim Minho
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea)
,
Ha Tae-Jun
(Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea)
,
Kim Yong-Hoon
(SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea)
,
Kim Yong-Hoon
(School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea)
資料名:
Ceramics International
(Ceramics International)
巻:
43
号:
16
ページ:
13576-13580
発行年:
2017年
JST資料番号:
H0705A
ISSN:
0272-8842
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)