文献
J-GLOBAL ID:201702286949163938
整理番号:17A1619628
長寿命アーカイブメモリのための金属-酸化物-窒化物-酸化物-半導体メモリの可能性
Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
著者 (7件):
SHIRAKAWA Hiroki
(Graduate School of Engineering, Nagoya University)
,
YAMAGUCHI Keita
(Graduate School of Engineering, Nagoya University)
,
ARAIDAI Masaaki
(Graduate School of Engineering, Nagoya University)
,
ARAIDAI Masaaki
(Institute of Materials and Systems for Sustainability, Nagoya University)
,
KAMIYA Katsumasa
(Center for Basic Education and Integrated Learning, Kanagawa Institute of Technology)
,
SHIRAISHI Kenji
(Graduate School of Engineering, Nagoya University)
,
SHIRAISHI Kenji
(Institute of Materials and Systems for Sustainability, Nagoya University)
資料名:
IEICE Transactions on Electronics (Web)
(IEICE Transactions on Electronics (Web))
巻:
E100.C
号:
10
ページ:
928-933(J-STAGE)
発行年:
2017年
JST資料番号:
U0468A
ISSN:
1745-1353
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
日本 (JPN)
言語:
英語 (EN)