文献
J-GLOBAL ID:201702286952276855
整理番号:17A0047747
ピラニア前処理と堆積後アニーリングによるAl2O3/β-Ga2O3(-201)界面の改良
Al2O3/ $¥beta $ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing
著者 (5件):
Zhou Hong
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA)
,
Alghmadi Sami
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA)
,
Si Mengwei
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA)
,
Qiu Gang
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA)
,
Ye Peide D.
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
37
号:
11
ページ:
1411-1414
発行年:
2016年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)