文献
J-GLOBAL ID:201702287183351255
整理番号:17A0462052
イットリウム安定化エピタキシャルHfO2薄膜の電気的特性に及ぼす厚さ依存性結晶モザイク性と化学的欠陥の影響
Effect of thickness-dependent crystal mosaicity and chemical defect on electric properties in yttrium-stabilized epitaxial HfO2 thin films
著者 (6件):
Liu Wenlong
(School of Electronic and Information Engineering & State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China)
,
Liu Ming
(School of Electronic and Information Engineering & State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China)
,
Cheng Sheng
(School of Electronic and Information Engineering & State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China)
,
Zhang Ruyi
(School of Electronic and Information Engineering & State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China)
,
Ma Rong
(School of Electronic and Information Engineering & State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China)
,
Wang Hong
(School of Electronic and Information Engineering & State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
12
ページ:
122904-122904-5
発行年:
2017年03月20日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)