文献
J-GLOBAL ID:201702287276703958
整理番号:17A2004947
エレクトロニクスとオプトエレクトロニクスのための(001)シリコン上の高度に不整合なIII-V族材料のエピタキシャル成長【Powered by NICT】
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
著者 (4件):
Li Qiang
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
,
Li Qiang
(Institute for Advanced Study, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
,
Lau Kei May
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
,
Lau Kei May
(Institute for Advanced Study, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
資料名:
Progress in Crystal Growth and Characterization of Materials
(Progress in Crystal Growth and Characterization of Materials)
巻:
63
号:
4
ページ:
105-120
発行年:
2017年
JST資料番号:
H0655A
ISSN:
0960-8974
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)