文献
J-GLOBAL ID:201702287483500712
整理番号:17A0284660
リンをドープしたn-a-SiNxOy/p-Siヘテロ接合発光ダイオードにおける電力効率の向上
Improved power efficiency in phosphorus doped n-a-SiNxOy/p-Si heterojunction light emitting diode
著者 (7件):
Lin Zewen
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China)
,
Chen Kunji
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China)
,
Zhang Pengzhan
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China)
,
Xu Jun
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China)
,
Li Wei
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China)
,
Yang Huafeng
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China)
,
Huang Xinfan
(School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
8
ページ:
081109-081109-4
発行年:
2017年02月20日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)