文献
J-GLOBAL ID:201702287523551313
整理番号:17A0203798
緑色発光ダイオード上のInGaN/GaN量子井戸におけるトリメチルインジウム処理による多重中断の影響【Powered by NICT】
Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
著者 (10件):
Qiao Liang
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
,
Ma Ziguang
(Institute of Physics, Chinese Academy of Sciences)
,
Chen Hong
(Institute of Physics, Chinese Academy of Sciences)
,
Wu Haiyan
(Institute of Physics, Chinese Academy of Sciences)
,
Chen Xuefang
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
,
Yang Haojun
(Institute of Physics, Chinese Academy of Sciences)
,
Zhao Bin
(Institute of Physics, Chinese Academy of Sciences)
,
He Miao
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
,
Zheng Shuwen
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
,
Li Shuti
(Institute of Opto-Electronic Materials and Technology, South China Normal University)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
10
ページ:
107803-1-107803-4
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)