文献
J-GLOBAL ID:201702287919547758
整理番号:17A1906952
ミリ波応用のためのゲート挿入金属層を有するAlGaN/GaN型HEMTの熱安定性と小信号特性
Thermal stability and small-signal characteristics of AlGaN/GaN HEMTs with gate insertion metal layer for millimeter-wave applications
著者 (6件):
Kim Dong-Hwan
(Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea)
,
Eom Su-Keun
(Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea)
,
Jeong Jun-Seok
(Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea)
,
Lee Jae-Gil
(Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea)
,
Seo Kwang-Seok
(Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea)
,
Cha Ho-Young
(School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, South Korea)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
35
号:
6
ページ:
060601-060601-5
発行年:
2017年11月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)