文献
J-GLOBAL ID:201702287977204830
整理番号:17A0132717
HfCp(NMe2)3とO2プラズマを用いたHfO2の原子層堆積法
Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
著者 (5件):
Sharma Akhil
(Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands)
,
Longo Valentino
(ams AG, Tobelbader Strasse 30, A-8141 Premstaetten, Austria)
,
Verheijen Marcel A.
(Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands and Philips Innovation Services, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands)
,
Bol Ageeth A.
(Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands)
,
Kessels W. M. M. (Erwin)
(Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands)
資料名:
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films
(Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films)
巻:
35
号:
1
ページ:
01B130-01B130-8
発行年:
2017年01月
JST資料番号:
C0789B
ISSN:
0734-2101
CODEN:
JVTAD6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)