文献
J-GLOBAL ID:201702288074720758
整理番号:17A1348270
SOIに基づくトンネルFETの解析と最適化【Powered by NICT】
Analysis and optimization of tunneling-FET based on SOI
著者 (4件):
Li Ying
(Institute of Microelectronics of Chinese Academy of Sciences, Key Laboratory of Silicon Device Technology, Beijing 100029, China)
,
Bu Jianhui
(Institute of Microelectronics of Chinese Academy of Sciences, Key Laboratory of Silicon Device Technology, Beijing 100029, China)
,
Luo Jiajun
(Institute of Microelectronics of Chinese Academy of Sciences, Key Laboratory of Silicon Device Technology, Beijing 100029, China)
,
Han Zhengsheng
(Institute of Microelectronics of Chinese Academy of Sciences, Key Laboratory of Silicon Device Technology, Beijing 100029, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
ICSICT
ページ:
816-818
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)