文献
J-GLOBAL ID:201702288080724260
整理番号:17A1181689
ホール残存機構による高性能垂直Si PiNダイオード【Powered by NICT】
High-performance vertical Si PiN diode by hole remaining mechanism
著者 (5件):
Tsukuda Masanori
(Advanced Power Devices Laboratory, Green Electronics Research Institute, 1-8 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka, Japan)
,
Tsukuda Masanori
(Next Generation Power Electronics Research Center, Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka, Japan)
,
Baba Akiyoshi
(Center for Microelectronic Systems, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka-shi, Fukuoka, Japan)
,
Shiba Yuji
(Next Generation Power Electronics Research Center, Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka, Japan)
,
Omura Ichiro
(Next Generation Power Electronics Research Center, Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu-shi, Fukuoka, Japan)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
129
ページ:
22-28
発行年:
2017年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)