文献
J-GLOBAL ID:201702288110736716
整理番号:17A1170531
AlN中間層を用いたSi上のGaN成長のための応力制御の機構【Powered by NICT】
Mechanism of stress control for GaN growth on Si using AlN interlayers
著者 (4件):
Suzuki Michihiro
(Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
,
Nakamura Akihiro
(Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
,
Nakano Yoshiaki
(Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
,
Sugiyama Masakazu
(Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
464
ページ:
148-152
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)