文献
J-GLOBAL ID:201702288149453011
整理番号:17A1622921
InAs/GaAs量子ドットヘテロ構造への成長中断によるInAs量子ドットの最適化【Powered by NICT】
Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure
著者 (8件):
Tongbram B.
(Centre of Research in Nanotechnology & Science, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India)
,
Tongbram B.
(Center of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India)
,
Ahmad A.
(Center of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India)
,
Sengupta S.
(Center for Quantum Devices, Northwestern University, United States)
,
Mandal A.
(Department of Electrical and Computer Engineering, UW-Madison, WI, United States)
,
Singhal J.
(Center of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India)
,
Balgarkashi A.
(Center of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India)
,
Chakrabarti S.
(Center of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India)
資料名:
Journal of Luminescence
(Journal of Luminescence)
巻:
192
ページ:
89-97
発行年:
2017年
JST資料番号:
D0731A
ISSN:
0022-2313
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)