文献
J-GLOBAL ID:201702288250239178
整理番号:17A1802784
4H-SiC p-i-nダイオードに順方向電流を加えることによって膨張した積層欠陥の原因解析
Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes
著者 (19件):
HAYASHI Shohei
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
HAYASHI Shohei
(Toray Res. Center Inc., Otsu, JPN)
,
NAIJO Takanori
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
NAIJO Takanori
(Toray Res. Center Inc., Otsu, JPN)
,
YAMASHITA Tamotsu
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
YAMASHITA Tamotsu
(SHOWA DENKO K.K., Tokyo, JPN)
,
MIYAZATO Masaki
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
MIYAZATO Masaki
(Fuji Electric Co., Ltd., Tokyo, JPN)
,
RYO Mina
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
RYO Mina
(Fuji Electric Co., Ltd., Tokyo, JPN)
,
FUJISAWA Hiroyuki
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
FUJISAWA Hiroyuki
(Fuji Electric Co., Ltd., Tokyo, JPN)
,
MIYAJIMA Masaaki
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
MIYAJIMA Masaaki
(Fuji Electric Co., Ltd., Tokyo, JPN)
,
SENZAKI Junji
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
KATO Tomohisa
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
YONEZAWA Yoshiyuki
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
KOJIMA Kazutoshi
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
,
OKUMURA Hajime
(National Inst. of Advanced Industrial Sci. and Technol., Ibaraki, JPN)
資料名:
Applied Physics Express
(Applied Physics Express)
巻:
10
号:
8
ページ:
081201.1-081201.4
発行年:
2017年08月
JST資料番号:
F0599C
ISSN:
1882-0778
CODEN:
APEPC4
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
イギリス (GBR)
言語:
英語 (EN)