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J-GLOBAL ID:201702288296088997
整理番号:17A1391964
発光ダイオードエピタキシャルウエハ上のIII族窒化物フォトトランジスタの作製【Powered by NICT】
III-Nitride Phototransistors Fabricated on a Light-Emitting-Diode Epitaxial Wafer
著者 (6件):
Yeh Pinghui S.
(Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan)
,
Hsu Teng-Po
(Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan)
,
Chiu Yen-Chieh
(Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan)
,
Yang Sian
(Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan)
,
Wu Cheng-You
(Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan)
,
Liou Jung-Shan
(Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan)
資料名:
IEEE Photonics Technology Letters
(IEEE Photonics Technology Letters)
巻:
29
号:
19
ページ:
1679-1682
発行年:
2017年
JST資料番号:
T0721A
ISSN:
1041-1135
CODEN:
IPTLEL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)