文献
J-GLOBAL ID:201702288535714749
整理番号:17A1273394
高性能SiCパワーMOSFETのためのフリー金属/高kゲートスタックの信頼性を意識した設計【Powered by NICT】
Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET
著者 (11件):
Hosoi Takuji
(Graduate School of Eng., OsakaUniversity, Suita, Osaka, Japan)
,
Azumo Shuji
(Yamanashi Regional Office, Tokyo Electron Limited, Nirasaki, Yamanashi, Japan)
,
Kashiwagi Yusaku
(Yamanashi Regional Office, Tokyo Electron Limited, Nirasaki, Yamanashi, Japan)
,
Hosaka Shigetoshi
(Yamanashi Regional Office, Tokyo Electron Limited, Nirasaki, Yamanashi, Japan)
,
Yamamoto Kenji
(Yamanashi Regional Office, Tokyo Electron Limited, Nirasaki, Yamanashi, Japan)
,
Aketa Masatoshi
(Yamanashi Regional Office, Tokyo Electron Limited, Nirasaki, Yamanashi, Japan)
,
Asahara Hirokazu
(ROHM Co., Ltd., Ukyo-ku, Kyoto, Japan)
,
Nakamura Takashi
(ROHM Co., Ltd., Ukyo-ku, Kyoto, Japan)
,
Kimoto Tsunenobu
(Dept. Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, Japan)
,
Shimura Takayoshi
(Graduate School of Eng., OsakaUniversity, Suita, Osaka, Japan)
,
Watanabe Heiji
(Graduate School of Eng., OsakaUniversity, Suita, Osaka, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ISPSD
ページ:
247-250
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)