文献
J-GLOBAL ID:201702288996414479
整理番号:17A0323192
フェムト秒レーザ照射により作製したSi/Se二層膜を用いたシリコンのSeドーピング【Powered by NICT】
Se doping of silicon with Si/Se bilayer films prepared by femtosecond-laser irradiation
著者 (9件):
Du Lingyan
(School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Du Lingyan
(School of Automation and Electronic Information, Sichuan University of Science & Engineering, Zigong, Sichuan 643000, PR China)
,
Wu Zhiming
(School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Su Yuanjie
(School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Li Rui
(School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Tang Fei
(School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Li Shibin
(School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Zhang Ting
(School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Jiang Yadong
(School of Optoelectronic Information, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
54
ページ:
51-56
発行年:
2016年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)