文献
J-GLOBAL ID:201702289229490346
整理番号:17A0662317
IGBTモジュールのための温度勾配に基づく潜在的な欠陥同定法【Powered by NICT】
A Temperature Gradient-Based Potential Defects Identification Method for IGBT Module
著者 (7件):
Gao Bing
(State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Yang Fan
(State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Chen Minyou
(State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Ran Li
(State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Ullah Irfan
(State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Xu Shengyou
(State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
,
Mawby Philip
(State Key Laboratory of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China)
資料名:
IEEE Transactions on Power Electronics
(IEEE Transactions on Power Electronics)
巻:
32
号:
3
ページ:
2227-2242
発行年:
2017年
JST資料番号:
D0211B
ISSN:
0885-8993
CODEN:
ITPEE8
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)