文献
J-GLOBAL ID:201702289249608619
整理番号:17A0381622
正確な圧力センシングのための受動温度補償周波数AlN上のシリコン共振器【Powered by NICT】
A passively temperature-compensated dual-frequency aln-on-silicon resonator for accurate pressure sensing
著者 (7件):
Xie Qingyun
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Wang Nan
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Sun Chengliang
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Randles Andrew B.
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Singh Pushpapraj
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Zhang Xiaolin
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Gu Yuandong
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
MEMS
ページ:
977-980
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)