文献
J-GLOBAL ID:201702289338640558
整理番号:17A0475374
ボトムコンタクト構造ペンタセン薄膜トランジスタのための2段階表面改質【Powered by NICT】
Two-step surface modification for bottom-contact structured pentacene thin-film transistors
著者 (6件):
Wang Sihan
(School of Electronic and Electrical Engineering, Sungkyunkwan University, Gyeonggi 16419, South Korea)
,
Kim Jin-Ho
(School of Electronic and Electrical Engineering, Sungkyunkwan University, Gyeonggi 16419, South Korea)
,
Park Eung-Kyu
(School of Electronic and Electrical Engineering, Sungkyunkwan University, Gyeonggi 16419, South Korea)
,
Oh Jongsu
(School of Electronic and Electrical Engineering, Sungkyunkwan University, Gyeonggi 16419, South Korea)
,
Park KeeChan
(Department of Electronic Engineering, Konkuk University, Seoul 143-701, South Korea)
,
Kim Yong-Sang
(School of Electronic and Electrical Engineering, Sungkyunkwan University, Gyeonggi 16419, South Korea)
資料名:
Organic Electronics
(Organic Electronics)
巻:
43
ページ:
21-26
発行年:
2017年
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)