文献
J-GLOBAL ID:201702289424720674
整理番号:17A0222620
n型蓄積キャパシタンスの高周波数分散に対するGaAs(001)表面電子構造の関連性
Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance
著者 (9件):
Pi T. W.
(National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan)
,
Chen W. S.
(National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan)
,
Lin Y. H.
(Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan)
,
Cheng Y. T.
(Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan)
,
Wei G. J.
(Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan)
,
Lin K. Y.
(Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan)
,
Cheng C. -P.
(Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan)
,
Kwo J.
(Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan)
,
Hong M.
(Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
5
ページ:
052107-052107-5
発行年:
2017年01月30日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)