文献
J-GLOBAL ID:201702289863248864
整理番号:17A0759397
MOVPEによりサファイア基板上に成長させたAlNの構造品質の改善のためのナノメータ薄A LD Al_2O_3【Powered by NICT】
Nanometer-thin ALD-Al2O3 for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE
著者 (7件):
Banal Ryan G.
(Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 305-0044, 1-1 Namiki, Tsukuba, Ibaraki, Japan)
,
Imura Masataka
(Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 305-0044, 1-1 Namiki, Tsukuba, Ibaraki, Japan)
,
Tsuya Daiju
(Nanofabrication Platform, NIMS, 305-0047, 1-2-1 Sengen, Tsukuba, Ibaraki, Japan)
,
Iwai Hideo
(Materials Analysis Station, NIMS, 305-0047, 1-2-1 Sengen, Tsukuba, Ibaraki, Japan)
,
Koide Yasuo
(Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 305-0044, 1-1 Namiki, Tsukuba, Ibaraki, Japan)
,
Koide Yasuo
(Nanofabrication Platform, NIMS, 305-0047, 1-2-1 Sengen, Tsukuba, Ibaraki, Japan)
,
Koide Yasuo
(Research Network and Facility Services Division, NIMS, 305-0044, 1-1 Namiki, Tsukuba, Ibaraki, Japan)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
2
ページ:
ROMBUNNO.201600727
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)