文献
J-GLOBAL ID:201702289961595713
整理番号:17A0020891
低k/high K二層ゲート誘電体を有する低電圧高分子OTFTのための改善されたバイアスストレス安定性【Powered by NICT】
Improved bias stress stability for low-voltage polymer OTFTs with low-k/high-k bilayer gate dielectric
著者 (6件):
Tang Wei
(National Engineering Laboratory for TFT-LCD Materials and Technologies Department of Electronic Engineering, Shanghai Jiao Tong University, China)
,
Zhao Jiaqing
(National Engineering Laboratory for TFT-LCD Materials and Technologies Department of Electronic Engineering, Shanghai Jiao Tong University, China)
,
Huang Yukun
(National Engineering Laboratory for TFT-LCD Materials and Technologies Department of Electronic Engineering, Shanghai Jiao Tong University, China)
,
Ding Li
(National Engineering Laboratory for TFT-LCD Materials and Technologies Department of Electronic Engineering, Shanghai Jiao Tong University, China)
,
Chen Sujie
(National Engineering Laboratory for TFT-LCD Materials and Technologies Department of Electronic Engineering, Shanghai Jiao Tong University, China)
,
Guo Xiaojun
(National Engineering Laboratory for TFT-LCD Materials and Technologies Department of Electronic Engineering, Shanghai Jiao Tong University, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
CAD-TFT
ページ:
1
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)