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J-GLOBAL ID:201702290093396052
整理番号:17A1391427
FinFETを基本としたシステムオンチップ技術のためのハイブリッドフィン/平面LDMOS設計のシミュレーションに基づく研究【Powered by NICT】
Simulation-Based Study of Hybrid Fin/Planar LDMOS Design for FinFET-Based System-on-Chip Technology
著者 (7件):
Wu Yi-Ting
(Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan City, Taiwan)
,
Ding Fei
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Connelly Daniel
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Zheng Peng
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Chiang Meng-Hsueh
(Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan City, Taiwan)
,
Chen Jone F.
(Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan City, Taiwan)
,
Liu Tsu-Jae King
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
10
ページ:
4193-4199
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)