文献
J-GLOBAL ID:201702290446839888
整理番号:17A0151793
Gaの集束イオンビーム注入によるリソグラフィーフリー配置GaAsナノワイヤ成長
Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga
著者 (9件):
Detz Hermann
(Austrian Academy of Sciences, Dr. Ignaz Seipel-Platz 2, 1010 Wien, Austria and Center for Micro- and Nanostructures and Institute for Solid-State Elecronics, TU Wien, Floragasse 7, 1040 Wien, Austria)
,
Kriz Martin
(Center for Micro- and Nanostructures and Institute for Solid-State Elecronics, TU Wien, Floragasse 7, 1040 Wien, Austria)
,
Lancaster Suzanne
(Center for Micro- and Nanostructures and Institute for Solid-State Elecronics, TU Wien, Floragasse 7, 1040 Wien, Austria)
,
MacFarland Donald
(Center for Micro- and Nanostructures and Institute for Solid-State Elecronics, TU Wien, Floragasse 7, 1040 Wien, Austria)
,
Schinnerl Markus
(Center for Micro- and Nanostructures and Institute for Solid-State Elecronics, TU Wien, Floragasse 7, 1040 Wien, Austria)
,
Zederbauer Tobias
(Center for Micro- and Nanostructures and Institute for Solid-State Elecronics, TU Wien, Floragasse 7, 1040 Wien, Austria)
,
Andrews Aaron Maxwell
(Center for Micro- and Nanostructures and Institute for Solid-State Elecronics, TU Wien, Floragasse 7, 1040 Wien, Austria)
,
Schrenk Werner
(Center for Micro- and Nanostructures and Institute for Solid-State Elecronics, TU Wien, Floragasse 7, 1040 Wien, Austria)
,
Strasser Gottfried
(Center for Micro- and Nanostructures and Institute for Solid-State Elecronics, TU Wien, Floragasse 7, 1040 Wien, Austria)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
35
号:
1
ページ:
011803-011803-5
発行年:
2017年01月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)