文献
J-GLOBAL ID:201702290565193341
整理番号:17A0451321
多結晶シリコンインゴットにおける気泡欠陥の形成に対する熱力学的モデル【Powered by NICT】
A thermodynamic model for the formation of bubble defects in multicrystalline silicon ingot
著者 (6件):
Gan Chuanhai
(Fujian Key Laboratory of Advanced Materials, College of Materials, Xiamen University, Xiamen 361005, China)
,
Huang Liuqing
(Fujian Key Laboratory of Advanced Materials, College of Materials, Xiamen University, Xiamen 361005, China)
,
Lai Huixian
(Fujian Key Laboratory of Advanced Materials, College of Materials, Xiamen University, Xiamen 361005, China)
,
Sheng Zhilin
(College of Materials Science and Engineering, Beifang University of Nationalities, Yinchuan 750021, China)
,
Xing Pengfei
(School of Materials and Metallurgy, Northeastern University, Shenyang 110004, China)
,
Luo Xuetao
(Fujian Key Laboratory of Advanced Materials, College of Materials, Xiamen University, Xiamen 361005, China)
資料名:
Applied Thermal Engineering
(Applied Thermal Engineering)
巻:
113
ページ:
1358-1365
発行年:
2017年
JST資料番号:
E0667B
ISSN:
1359-4311
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)