文献
J-GLOBAL ID:201702290682303518
整理番号:17A1967729
Al_2O_3/AlGaN/AlN/GaNヘテロ構造における電子移動度に及ぼす光学フォノン散乱【Powered by NICT】
Optical phonon scattering on electronic mobility in Al2O3/AlGaN/AlN/GaN heterostructures
著者 (5件):
Zhou X.J.
(Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China)
,
Zhou X.J.
(Ordos Institute of Technology, Ordos 017000, Inner Mongolia, China)
,
Qu Y.
(Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China)
,
Ban S.L.
(Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China)
,
Wang Z.P.
(Department of Physics, School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
112
ページ:
1-9
発行年:
2017年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)