文献
J-GLOBAL ID:201702290890542634
整理番号:17A0412389
Tiナノ層に埋め込まれたTaO_xベース素子の抵抗スイッチング挙動【Powered by NICT】
Resistive switching behaviors of Ti nano-layer embedded TaOx-based devices
著者 (9件):
Jeon Heeyoung
(Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea)
,
Park Jingyu
(Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea)
,
Jang Woochool
(Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, South Korea)
,
Kim Hyunjung
(Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea)
,
Lee Kunyoung
(Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, South Korea)
,
Shin Changhee
(Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea)
,
Lee Jaemin
(Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea)
,
Jeon Hyeongtag
(Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea)
,
Jeon Hyeongtag
(Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, South Korea)
資料名:
Current Applied Physics
(Current Applied Physics)
巻:
17
号:
2
ページ:
230-234
発行年:
2017年
JST資料番号:
W1579A
ISSN:
1567-1739
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)