文献
J-GLOBAL ID:201702290890730752
整理番号:17A1967739
UV-A発光ダイオード中の逆方向漏れ電流の伝導機構に及ぼす定電流応力の影響【Powered by NICT】
Influence of constant current stress on the conduction mechanisms of reverse leakage current in UV-A light emitting diodes
著者 (8件):
Wang Yingzhe
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Zheng Xuefeng
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Dai Feng
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Dai Feng
(School of Mechano-electronic Engineering, Xidian University, Xi’an, 710071, China)
,
Zhu Jiaduo
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Li Peixian
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Ma Xiaohua
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
,
Hao Yue
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
112
ページ:
105-110
発行年:
2017年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)