文献
J-GLOBAL ID:201702291003611978
整理番号:17A0014009
Ge(100)基板上のGeSn/Ge多重量子井戸のキャラクタリゼーションと熱安定性
Characterization and thermal stability of GeSn/Ge multi-quantum wells on Ge (100) substrates
著者 (7件):
Zhang Xu
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Liu Zhi
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
He Chao
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Cheng Buwen
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Xue Chunlai
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Li Chuanbo
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Wang Qiming
(State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
27
号:
9
ページ:
9341-9345
発行年:
2016年09月
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)