文献
J-GLOBAL ID:201702291136767541
整理番号:17A0026001
SiGe基板とGaAs基板のIn0.23Ga0.77AsチャネルMOSFETでの電流比ION/IOFFと移動度の比較
The Comparison of Current Ratio $I_{¥mathrm{¥scriptscriptstyle ON}}/I_{¥mathrm{¥scriptscriptstyle OFF}}$ and Mobility Between SiGe Substrate and GaAs Substrate In0.23Ga0.77As Channel MOSFETs
著者 (9件):
Kong Xiangting
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Liang Renrong
(Tsinghua National Laboratory for information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing, China)
,
Zhou Xuliang
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Li Shiyan
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Wang Mengqi
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Liu Honggang
(Microwave Device and IC Department, Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Wang Jing
(Tsinghua National Laboratory for information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing, China)
,
Wang Wei
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Pan Jiaoqing
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
63
号:
8
ページ:
3084-3087
発行年:
2016年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)