文献
J-GLOBAL ID:201702291364616826
整理番号:17A0755417
くし状光誘起シナプストランジスタの飽和挙動【Powered by NICT】
Saturation Behavior for a Comb-Like Light-Induced Synaptic Transistor
著者 (8件):
Zhu Guixia
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Gao Xumin
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Li Yuanhang
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Yuan Jialei
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Yuan Wei
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Yang Yongchao
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Zhang Zhiyu
(Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, China)
,
Wang Yongjin
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
1
ページ:
71-74
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)