文献
J-GLOBAL ID:201702291562879678
整理番号:17A0758493
工業プロセスによるn型両面c-Si太陽電池のAl_2O_3不動態化ほう素エミッタ薄い【Powered by NICT】
Thin Al2O3 passivated boron emitter of n-type bifacial c-Si solar cells with industrial process
著者 (5件):
Lu Guilin
(Institute of Solar Energy, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China)
,
Zheng Fei
(Shanghai Shenzhou New Energy Development Co., Ltd., Shanghai, 201112, China)
,
Wang Jianqiang
(Shanghai Shenzhou New Energy Development Co., Ltd., Shanghai, 201112, China)
,
Shen Wenzhong
(Institute of Solar Energy, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China)
,
Shen Wenzhong
(Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, China)
資料名:
Progress in Photovoltaics
(Progress in Photovoltaics)
巻:
25
号:
4
ページ:
280-290
発行年:
2017年
JST資料番号:
W0463A
ISSN:
1062-7995
CODEN:
PPHOED
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)