文献
J-GLOBAL ID:201702291646324821
整理番号:17A0214328
負性静電容量FinFETのコンパクトモデル:集中および分散電荷モデル【Powered by NICT】
Compact models of negative-capacitance FinFETs: Lumped and distributed charge models
著者 (8件):
Duarte Juan P.
(Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley)
,
Khandelwal Sourabh
(Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley)
,
Khan Asif I.
(Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley)
,
Sachid Angada
(Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley)
,
Lin Yen-Kai
(Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley)
,
Chang Huan-Lin
(Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley)
,
Salahuddin Sayeef
(Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley)
,
Hu Chenming
(Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
30.5.1-30.5.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)