文献
J-GLOBAL ID:201702291725035574
整理番号:17A0759460
カンチレバーエピタクシーによりナノパターン化したSi基板上の厚いAlN層の直接成長【Powered by NICT】
Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy
著者 (8件):
Demir Ilkay
(Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, 60208-0893, USA)
,
Demir Ilkay
(Department of Nanotechnology Engineering, Cumhuriyet University, 58140 Sivas, Turkey)
,
Robin Yoann
(Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, 60208-0893, USA)
,
McClintock Ryan
(Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, 60208-0893, USA)
,
Elagoz Sezai
(Department of Nanotechnology Engineering, Cumhuriyet University, 58140 Sivas, Turkey)
,
Zekentes Konstantinos
(Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, 60208-0893, USA)
,
Zekentes Konstantinos
(Foundation for Research & Technology-Hellas (FORTH), IESL, 1527 Heraklion, Greece)
,
Razeghi Manijeh
(Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL, 60208-0893, USA)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
4
ページ:
ROMBUNNO.201600363
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)