文献
J-GLOBAL ID:201702291901861427
整理番号:17A0407781
MOCVDによってc面サファイア上に成長させたAlN膜の構造特性に及ぼす核形成層形態の影響【Powered by NICT】
Influence of the nucleation layer morphology on the structural property of AlN films grown on c-plane sapphire by MOCVD
著者 (12件):
Luo Weike
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, PR China)
,
Luo Weike
(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, PR China)
,
Li Liang
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, PR China)
,
Li Zhonghui
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, PR China)
,
Yang Qiankun
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, PR China)
,
Zhang Dongguo
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, PR China)
,
Dong Xun
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, PR China)
,
Peng Daqing
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, PR China)
,
Pan Lei
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, PR China)
,
Li Chuanhao
(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, PR China)
,
Liu Bin
(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, PR China)
,
Zhong Rong
(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, PR China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
697
ページ:
262-267
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)