文献
J-GLOBAL ID:201702291976584248
整理番号:17A0662003
浮遊シリコン基板におけるシリコン貫通ビアの過渡解析【Powered by NICT】
Transient Analysis of Through-Silicon Vias in Floating Silicon Substrate
著者 (5件):
Zhao Wen-Sheng
(Key Lab of RF Circuits and Systems of Ministry of Education, Zhejiang Provincial Key Lab of LSI Design, Microelectronics CAD Center, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China)
,
Zheng Jie
(Key Lab of RF Circuits and Systems of Ministry of Education, Zhejiang Provincial Key Lab of LSI Design, Microelectronics CAD Center, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China)
,
Chen Shichang
(Key Lab of RF Circuits and Systems of Ministry of Education, Zhejiang Provincial Key Lab of LSI Design, Microelectronics CAD Center, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China)
,
Wang Xiang
(Key Lab of RF Circuits and Systems of Ministry of Education, Zhejiang Provincial Key Lab of LSI Design, Microelectronics CAD Center, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China)
,
Wang Gaofeng
(Key Lab of RF Circuits and Systems of Ministry of Education, Zhejiang Provincial Key Lab of LSI Design, Microelectronics CAD Center, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China)
資料名:
IEEE Transactions on Electromagnetic Compatibility
(IEEE Transactions on Electromagnetic Compatibility)
巻:
59
号:
1
ページ:
207-216
発行年:
2017年
JST資料番号:
H0383A
ISSN:
0018-9375
CODEN:
IEMCAE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)