文献
J-GLOBAL ID:201702298331337264
整理番号:17A0124352
組成勾配p-AlGaN不規則鋸歯状電子阻止層を有する近紫外発光ダイオードの改善された性能【Powered by NICT】
Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer
著者 (12件):
Qin Ping
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Song Weidong
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Hu Wenxiao
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Zhang Yuanwen
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Zhang Chongzhen
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Wang Rupeng
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Zhao Liangliang
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Xia Chao
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Yuan Songyang
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Yin Yian
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Li Shuti
(Institute of Opto-electronic Materials and Technology, South China Normal University)
,
Su Shichen
(Institute of Opto-electronic Materials and Technology, South China Normal University)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
8
ページ:
088505-1-088505-05
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)