文献
J-GLOBAL ID:201702299193595541
整理番号:17A0453190
PEDOTの逆回復過渡特性:PSS/n Si複合有機-無機ヘテロ接合【Powered by NICT】
Reverse recovery transient characteristic of PEDOT:PSS/n-Si hybrid organic-inorganic heterojunction
著者 (9件):
Prakoso Ari Bimo
(Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore)
,
Prakoso Ari Bimo
(CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553, Singapore)
,
Ke Lin
(Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore)
,
Wang Jianxiong
(Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore)
,
Li Zeyu
(Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore)
,
Li Zeyu
(CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553, Singapore)
,
Jiang Changyun
(Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore)
,
Rusli
(Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore)
,
Rusli
(CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553, Singapore)
資料名:
Organic Electronics
(Organic Electronics)
巻:
42
ページ:
269-274
発行年:
2017年
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)