文献
J-GLOBAL ID:201802210321687988
整理番号:18A0187839
Gaussドーピングを用いたヘテロ接合二重ゲートドレイン重複TFETの性能改善【Powered by NICT】
Performance improvement of heterojunction double gate drain overlapped TFET using Gaussian doping
著者 (5件):
Gupta Sarthak
(Nanoelectronics and VLSI Lab, Indian Institute of Information Technology, Design and Manufacturing Jabalpur, India)
,
Nigam Kaushal
(Nanoelectronics and VLSI Lab, Indian Institute of Information Technology, Design and Manufacturing Jabalpur, India)
,
Pandey Sunil
(Nanoelectronics and VLSI Lab, Indian Institute of Information Technology, Design and Manufacturing Jabalpur, India)
,
Sharma Dheeraj
(Nanoelectronics and VLSI Lab, Indian Institute of Information Technology, Design and Manufacturing Jabalpur, India)
,
Kondekar P N
(Nanoelectronics and VLSI Lab, Indian Institute of Information Technology, Design and Manufacturing Jabalpur, India)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
E3S
ページ:
1-3
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)