文献
J-GLOBAL ID:201802211539785772
整理番号:18A1144269
スパッタZnOヘテロ構造における2DEGの表面状態と界面電荷の役割【JST・京大機械翻訳】
Role of Surface States and Interface Charges in 2DEG in Sputtered ZnO Heterostructures
著者 (4件):
Singh Rohit
(Hybrid Nanodevice Research Group (HNRG) and Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, IIT Indore, Simrol, Indore, India)
,
Khan Md. Arif
(Hybrid Nanodevice Research Group (HNRG) and Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, IIT Indore, Simrol, Indore, India)
,
Mukherjee Shaibal
(Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, IIT Indore, Simrol, Indore, India)
,
Kranti Abhinav
(Low Power Nanoelectronics Research Group, Discipline of Electrical Engineering, IIT Indore, Simrol, Indore, India)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
65
号:
7
ページ:
2850-2854
発行年:
2018年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)