文献
J-GLOBAL ID:201802211664136889
整理番号:18A0190635
マルチレベル操作による層選択を用いたチャネル積層NANDフラッシュメモリにおけるブースト共通ソースラインプログラム方式【Powered by NICT】
A boosted common source line program scheme in channel stacked NAND flash memory with layer selection by multilevel operation
著者 (5件):
Kim Do-Bin
(Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea)
,
Kwon Dae Woong
(Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea)
,
Kim Seunghyun
(Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea)
,
Lee Sang-Ho
(Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea)
,
Park Byung-Gook
(Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-744, Republic of Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
SNW
ページ:
77-78
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)