文献
J-GLOBAL ID:201802211920853574
整理番号:18A2161008
三次元シリコントランジスタを用いた回復可能なシナプスデバイス【JST・京大機械翻訳】
A Recoverable Synapse Device Using a Three-Dimensional Silicon Transistor
著者 (12件):
Hur Jae
(School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
,
Jang Byung Chul
(School of Electrical Engineering, Graphene/2D Materials Research Center, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
,
Park Jihun
(School of Electrical Engineering, Graphene/2D Materials Research Center, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
,
Moon Dong-Il
(NASA Ames Research Center, Moffett Field, CA, 94035, USA)
,
Bae Hagyoul
(School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
,
Park Jun-Young
(School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
,
Kim Gun-Hee
(School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
,
Jeon Seung-Bae
(School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
,
Seo Myungsoo
(School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
,
Kim Sungho
(Department of Electrical Engineering, Sejong University, Seoul, 05006, Republic of Korea)
,
Choi Sung-Yool
(School of Electrical Engineering, Graphene/2D Materials Research Center, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
,
Choi Yang-Kyu
(School of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
28
号:
47
ページ:
e1804844
発行年:
2018年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)