文献
J-GLOBAL ID:201802212965903069
整理番号:18A0190821
マイクロ波応用のためのAlGaN/GaNH EMTにおける自己加熱の実験的評価【Powered by NICT】
Experimental assessment of self-heating in AlGaN/GaN HEMTs for microwave application
著者 (6件):
Wu Mei
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2, South TaiBai Road, Xi’an, Shaanxi Province, China)
,
Zhu Qing
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2, South TaiBai Road, Xi’an, Shaanxi Province, China)
,
Mi Minhan
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2, South TaiBai Road, Xi’an, Shaanxi Province, China)
,
Yang Ling
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2, South TaiBai Road, Xi’an, Shaanxi Province, China)
,
Ma Xiaohua
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2, South TaiBai Road, Xi’an, Shaanxi Province, China)
,
Hao Yue
(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No.2, South TaiBai Road, Xi’an, Shaanxi Province, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
SSLChina: IFWS
ページ:
200-203
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)