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J-GLOBAL ID:201802213281933893
整理番号:18A0239874
平面デバイス形状を有する歪BiFeO_3薄膜における光伝導の厚さ依存性【Powered by NICT】
Thickness Dependence of Photoconductance in Strained BiFeO3 Thin Films With Planar Device Geometry
著者 (13件):
Huang Zhifeng
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Li Peilian
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Fan Zhen
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Fan Hua
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Luo Qiuyuan
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Chen Chao
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Chen Deyang
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Zeng Min
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Qin Minghui
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Zhang Zhang
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Lu Xubing
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Gao Xingsen
(Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China)
,
Liu Jun-Ming
(Laboratory of Solid State Microstructures, Nanjing University, No. 22 Hankou Rd Gulou District, 210093 Nanjing, China)
資料名:
Physica Status Solidi. Rapid Research Letters
(Physica Status Solidi. Rapid Research Letters)
巻:
12
号:
1
ページ:
ROMBUNNO.201700301
発行年:
2018年
JST資料番号:
W1880A
ISSN:
1862-6254
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)