文献
J-GLOBAL ID:201802213787178467
整理番号:18A2219531
GaAs基板上に成長させたホットLWIR T2SLS InAs/InAsSb光検出器の実証【JST・京大機械翻訳】
Demonstration of HOT LWIR T2SLs InAs/InAsSb photodetectors grown on GaAs substrate
著者 (9件):
Michalczewski K.
(Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland)
,
Kubiszyn L.
(Vigo System S.A., 129/133 Poznanska Str., 05-850 Ozarow Mazowiecki, Poland)
,
Martyniuk P.
(Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland)
,
Wu C.H.
(Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Sec.4, Roosevelt Rd., Taipei 10617, Taiwan)
,
Jurenczyk J.
(Vigo System S.A., 129/133 Poznanska Str., 05-850 Ozarow Mazowiecki, Poland)
,
Grodecki K.
(Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland)
,
Benyahia D.
(Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland)
,
Rogalski A.
(Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland)
,
Piotrowski J.
(Institute of Applied Physics, Military University of Technology, 2 Urbanowicza Str., 00-908 Warsaw, Poland)
資料名:
Infrared Physics & Technology
(Infrared Physics & Technology)
巻:
95
ページ:
222-226
発行年:
2018年
JST資料番号:
H0184A
ISSN:
1350-4495
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)