文献
J-GLOBAL ID:201802213914110126
整理番号:18A2029305
二つのHfO_2/Al_2O_3/GeO_x/Ge MOSダイオードによる不揮発性三成分含有量アドレス可能メモリ(TCAM)【JST・京大機械翻訳】
Non-Volatile Ternary Content Addressable Memory (TCAM) with Two HfO2/Al2O3/GeOx/Ge MOS Diodes
著者 (8件):
Zhang Yi
(College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China)
,
Chen Bing
(College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China)
,
Dong Wenfeng
(College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China)
,
Liu Wei
(College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China)
,
Xu Shun
(College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China)
,
Cheng Ran
(College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China)
,
Lee Shiuh-Wuu
(College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China)
,
Zhao Yi
(College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
VLSI Technology
ページ:
105-106
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)